IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/
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N-channel 60 V, 0. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability.
Typical Output Characteristics Fig. High Performance Schottky Rectifier, 3. The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Storage Temperature Range Soldering Temperature, for 10 seconds 1.
Maximum Drain Current vs. Order code Marking Package Packing. Absolute Maximum Ratings Parameter Max.
IRF9Z30 MOSFET P-CH 50V 18A TOAB Vishay IR datasheet pdf data sheet FREE from
They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. A, 4Dec 4 Document Number: Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. C Soldering Temperature, for 10 seconds 1.
Please contact authorized Vishay datasheet to obtain written terms and conditions regarding products designed for such applications. N-channel 60V – 0. A, 4Dec Document Number: Bryce Goodman 1 years ago Views: N-channel 55 V, 4. A, 4Dec 6 Document Number: Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Description N-channel 60 V, 0. A Qualified More information. To make this website work, we log user data and share it with processors. Thermal Resistance Symbol Parameter Typ.
IRF9Z30 MOSFET P-CH 50V 18A TO-220AB IRF9Z30
Typical Gate Charge vs. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Applications include motor control, datasyeet amplifiers, switched mode converters, control circuits and pulse amplifiers.
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Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. Such statements are not binding statements about the suitability of products for a particular application. This device is suitable. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Datasheeet products in generic applications.
General Features Figure 1. High Performance Schottky Rectifier, 1. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts.
A, 4Dec 3 Document Number: Products may be manufactured at one of several qualified locations. Except as expressly indicated in writing, Vishay products are not designed for use dafasheet medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in datasyeet injury or death.
R DS on max. Q g typical nc 27 A. Start display at page:. Product names and markings noted herein may be trademarks of their respective owners.